| PART |
Description |
Maker |
| GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SA1357 E000517 |
TRANSISTOR (STROBE FLASH/ AUDIO POWER AMPLIFIER APPLICATIONS)
TRANSISTOR (STROBE FLASH, AUDIO POWER AMPLIFIER APPLICATIONS)
STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIERAPPLICATIONS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1160 E000473 |
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1327A 2SA1327A06 |
Strobe Flash Applications Audio Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA116007 2SA1160 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC468405 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1431-Y |
5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1327A |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Amplifier Applications
|
TOSHIBA
|
| GT8G10306 |
STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
| GT8G12106 |
STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
| GT20G102 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
