| PART |
Description |
Maker |
| A3187ELT A3187EUA A3187LLT A3187LT UGN3175SUA A318 |
HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION 霍尔效应锁存器的高温作业 SENSOR IC 5CH 5V 5MA SGL 28-SSOP Hall-Effect Latch For High-Temperature Operation(工作于高温的霍尔效应锁存 Hall-effect latche for high-temperature operation
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Allegro MicroSystems, Inc. ALLEGRO[Allegro MicroSystems]
|
| NV23107 NV2312CSDC10VN NV2312CSDC10VS NV2312ASDC10 |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE (1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction) IC REG VOLT 4.8V 240MA SOT-23 Rectifiers(Rugged glass package/ using a high temperature alloyed construction) Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器(坚固的玻璃封装,采用高温合金建设 Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
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PHILIPS[Philips Semiconductors] http:// NXP Semiconductors N.V.
|
| MP3V5050V MP3V5050VC6T1 MP3V5050VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
Freescale Semiconductor, Inc
|
| MPXV6115VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated From old datasheet system
|
Motorola
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| AM2147-35PCB AM2147-70DC AM2147-70PC AM2147-70LC A |
Dual Low Noise, Picoampere Bias Current, JFET Input Op Amp; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C 500mA Negative Low Dropout Micropower Regulator; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C x1 SRAM 500mA Negative Low Dropout Micropower Regulator; Package: DD PAK; No of Pins: 5; Temperature Range: 0°C to 70°C 100kHz, 5A, 2.5A and 1.25A High Efficiency Switching Regulators; Package: DD PAK; No of Pins: 5; Temperature Range: 0°C to 70°C 100kHz, 5A, 2.5A and 1.25A High Efficiency Switching Regulators; Package: PDIP; No of Pins: 8; Temperature Range: -40°C to 85°C Dual and Quad 25MHz, 600V/µs Op Amps; Package: PDIP; No of Pins: 14; Temperature Range: 0°C to 70°C Dual and Quad 50MHz, 800V/µs Op Amps; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C 500kHz High Efficiency 6A Switching Regulator; Package: TO-220; No of Pins: 7; Temperature Range: -40°C to 85°C Dual and Quad 70MHz, 1000V/µs Op Amps; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C Dual and Quad Precision Rail-to-Rail Input and Output Op Amps; Package: SO; No of Pins: 14; Temperature Range: 0°C to 70°C Dual Low Noise, Picoampere Bias Current, JFET Input Op Amp; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C Micropower DC/DC Converter Adjustable and Fixed 5V, 12V; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C 500kHz and 1MHz High Efficiency 1.5A Switching Regulators; Package: SO; No of Pins: 8; Temperature Range: -40?°C to 85?°C 500kHz and 1MHz High Efficiency 1.5A Switching Regulators; Package: SO; No of Pins: 8; Temperature Range: -40?°C to 85?°C 射频放大 500mA Negative Low Dropout Micropower Regulator; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C x1的SRAM
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Advanced Micro Devices, Inc. Rochester Electronics, LLC Molex, Inc.
|
| CHTA16-400 CHTB16-400 CHTA16-400PT CHTA16-600 CHTA |
High Temperature 150掳C Series TRIAC High Temperature 150°C Series TRIAC
|
List of Unclassifed Manufacturers
|
| LTC4440ES6-5 LTC4440-5 LTC4440EMS8E-5 LTC4440EMS8E |
High Speed, High Voltage High Side Gate Driver; Package: SOT; No of Pins: 6; Temperature Range: -40°C to 125°C High Speed, High Voltage, High Side Gate Driver High Speed, High Voltage High Side Gate Driver; Package: MSOP; No of Pins: 8; Temperature Range: -40°C to 125°C 1.1 A BUF OR INV BASED MOSFET DRIVER, PDSO8
|
LINEAR TECHNOLOGY CORP Linear Technology, Corp.
|
| EMC5.0F-LC EMC8.0F-LC EMC3.3F-LC EMC15F-LC EMC12F- |
Direct ProTek Replacement:EMC5.0F-LC Two-Phase Multiphase Buck PWM Controller with Integrated MOSFET Drivers; Temperature Range: 0°C to 70°C; Package: 24-QFN 1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator; Temperature Range: -40°C to 85°C; Package: 10-DFN High Power LED Driver; Temperature Range: -25°C to 85°C; Package: 20-QFN Automotive Grade TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -25°C to 85°C; Package: 32-TQFP 直接太克替代:EMC3.3F,立法会 Two-Phase Multiphase Buck PWM Controller with Integrated MOSFET Drivers; Temperature Range: 0°C to 70°C; Package: 24-QFN 直接太克替代:EMC8.0F,立法会
|
New Japan Radio Co., Ltd.
|
| TX7-705C-S-HP |
High precision SMD TCXO High frequency stability vs. temperature 0.10 ppm
|
QUARTZCOM the communications company
|