| PART |
Description |
Maker |
| GT50G321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
|
TOSHIBA
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| GT60J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| PS22054 |
1200V/15A low-loss 4th generation IGBT inverter bridge for 3 phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| BFC61 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BFC14 |
4TH GENERATION MOSFET
|
Seme LAB
|
| SHB131DGGA-I7-4650U SHB131DGGA-I3-4010U |
4th generation Intel U-series processors
|
Axiomtek Co., Ltd.
|
| GT50J328 |
Current Resonance Inverter Switching Application Fourth Generation IGBT
|
Toshiba Semiconductor
|
| BFC11 |
4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
TT electronics Semelab Limited
Seme LAB
|
| R4-SXDP-20FR-R1 |
4th Generation Bearing ?MTBF of 160,000 hours thanks to highly durable POM components.
|
List of Unclassifed Man...
|
| BFC19 |
4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
Seme LAB
|
