| PART |
Description |
Maker |
| SB035C015-1-W-AG SB035C015-1 |
Schottky cr Barrier Diode Wafer
|
TRANSYS Electronics Limited
|
| SB073P150-W-AG SB073P150-W-AG_AL SB073P150-W-AG/AL |
Schottky Barrier Diode Wafer 73 Mils, 150 Volt, 5 Amp
|
TRANSYS Electronics Limited
|
| SB040P150-W-AG SB040P150-W-AL |
Schottky Barrier Diode Wafer 40 Mils, 150 Volt, 1 Amp
|
TRANSYS Electronics Limited
|
| SB090P125-W-AG |
Schottky Barrier Diode Wafer 90 Mils, 125 Volt, 8 Amp
|
TRANSYS Electronics Limited
|
| SB051C020-1-W-AG |
Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF.
|
TRANSYS Electronics Limited
|
| SB051C025-1-W-AG |
Schottky cr Barrier Diode Wafer 51 Mils, 25 Volt, 1 Amp, 0.33VF.
|
TRANSYS Electronics Limited
|
| SB039C025-0.5-W-AG |
Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 0.5 Amp, 0.34VF.
|
TRANSYS Electronics Limited
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| 5082-2279 50822279 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| KDR367E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 5082-2277 |
SCHOTTKY BARRIER DUAL DIODE SILICON, MEDIUM BARRIER SCHOTTKY, S-C BAND, MIXER DIODE
|
ASI
Advanced Semiconductor, Inc.
|
