| PART |
Description |
Maker |
| RD06HVF1-101 RD06HVF1 |
MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SC1324 |
MITSUBISHI RF POWER TRANSISTOR
NPN EPITAXIAL PLANAR TYPE(BROADBAND AMPLIFIERS FROM VHF TO UHF BAND)
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SC1971 |
silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SC3329 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers
|
TOSHIBA
|
| BFP193 Q62702-F1282 BFP193Q62702-F1282 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFS17P BFS18P. |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| SPI-236-17 SPI-236-17A |
Ultraminiature photointerrupter (single-transistor type) 超小型光电断路器（单晶体管型
2 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT
GaAs Infrared LED Ultraminiature photointerrupter (single-transistor type)
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| OP09 OP11 OP-09 OP-09AY OP-09EY OP-09FP OP-11 OP-1 |
Quad Matched 741-Type Operational Amplifiers 四匹41型运算放大器
ER 7C 7#8 SKT RECP WALL QUAD OP-AMP, 1000 uV OFFSET-MAX, 2.4 MHz BAND WIDTH, CQCC20
Quad Matched 741-Type Operational Amplifiers QUAD OP-AMP, 6000 uV OFFSET-MAX, 2.4 MHz BAND WIDTH, CDIP14
|
AD[Analog Devices]
Analog Devices, Inc.
|
| TPCP8H02 |
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| BFQ19S Q62702-F1088 BFQ19SQ62702F1088 |
TRANSISTOR R.F SOT89
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and)
NPN Silicon RF Transistor (For low noise low distortion broadband amplifiers in antenna and)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFY5002 BFY50.MODE4 |
MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR
1000 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
|
Seme LAB
SEMELAB LTD
|
