PART |
Description |
Maker |
RD06HVF1-101 RD06HVF1 |
MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
|
BFR106 Q62702-F1219 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 NPN Silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)|43 3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC] NEC, Corp. NEC Corp.
|
2SA1316 |
Transistor Silicon PNP Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers
|
TOSHIBA
|
2SC1729 SC1729 |
NPN EPITAXIAL PLANAR TYPE(RF power amplifiers on VHF band mobile radio) From old datasheet system NPN EPITAXAIL PLANAR TYPE
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
HDM8515P |
Operational Amplifier (Op-Amp) IC; Number of Amplifiers:4; Package/Case:14-DIP; Op Amp Type:Low Power; Single Supply Voltage Min ( V):3V; Dual Supply Voltage Max ( /- V):16V; Amplifier Type:Operational; Mounting Type:Through Hole 的DVB /决策支持系统兼容接收
|
Hynix Semiconductor, Inc.
|
HTT1115S |
High Frequency Amplifiers(Twin Type)
|
Hitachi Semiconductor
|
M62367GP |
3 V Type 8-bit 8ch D/A Converter with Buffer Amplifiers
|
Renesas Electronics Corporation
|
2SA1129 2SA1129-S 2SA1129-Z 2SA1129-AZ |
7 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB MP-25, 3 PIN From old datasheet system PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING Silicon transistor
|
Panasonic Semiconductor NEC
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