| PART |
Description |
Maker |
| GBU6J GBU6J-BP GBU6A-BP GBU6D-BP GBU6M-BP GBU6B-BP |
6 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
RECT BRIDGE GPP 6A 600V GBU 6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 6A 800V GBU 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
Micro Commercial Compon...
天津环球磁卡股份有限公司
Micro Commercial Components, Corp.
|
| NCP1421 NCP1421D NCP1421DMR NCP1421DMR2 NCP1421DMR |
600 mA Sync-Rect PFM Step-Up DC-DC Converter with True-Cutoff and Ring-Killer(带真切断（true-cutoff）和振荡消除（ring-killer）的600mA同步整流PFM步升DC-DC 转换
600 mA Sync-Rect PFM Step-Up DC-DC Converter Step-Up DC-DC Converter with True-Cutoff and Ring-Killer 1.5 A SWITCHING REGULATOR, 1200 kHz SWITCHING FREQ-MAX, PDSO8
|
ONSEMI[ON Semiconductor]
Rectron Semiconductor
|
| NCP1410_05 NCP1410 NCP1410DMR2 NCP1410DMR2G NCP141 |
250 mA Sync-Rect PFM Step-Up DC-DC Converter with Low-Battery Detector
|
ONSEMI[ON Semiconductor]
|
| NCP1421-D |
500 mA Sync-Rect PFM Step-Up DC-DC Converter with True-Cutoff and Ring-Killer
|
ON Semiconductor
|
| NCP1411DMR NCP1411DMR2 NCP1411DMR2G NCP1411D NCP14 |
Sync-Rect PFM Step-Up DC-DC Converter with Low-Battery Detector and Ring-Killer
|
ONSEMI[ON Semiconductor]
|
| HER301-T |
RECT HIGH-EFF 50V 3A DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Diodes, Inc.
|
| MB351W-BP MB354W-BP MB3510W-BP MB3505W-BP MB356W-B |
35 Amp Single Phase Bridge Rectifier 50 to 1000 Volts
RECT BRIDGE 35A 200V WIRE LEADS 35 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
天津环球磁卡股份有限公司
http://
Micro Commercial Components, Corp.
Micro Commercial Compon...
|
| HC26 HC38 HC35 HC79R2J224K HC26R2A103K HC26R2A123K |
NTE IC, POWER: 6 W, PACKAGE: 10 PIN SIP
SRAM Memory IC; Memory Type:MOS SRAM; Interface Type:Serial; Access Time, Tacc:300ns; Package/Case:22-DIP; Mounting Type:Through Hole
Voltage Regulator IC; Output Current:100mA; Output Voltage:9V; Package/Case:3-TO-92; Voltage Regulator Type:Positive Voltage; Mounting Type:Through
DIODE ZENER 150MW 33V 0603
RECT FAST REC 400V 8A TO-220A 高压多层陶瓷电容
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:200V; Forward Current Avg Rectified, IF(AV):250mA; Forward Voltage Max, VF:1.25V; Vf Test Current:200mA; Reverse Recovery Time, trr:50ns; Power Dissipation, Pd:400mW 高压多层陶瓷电容
MEDIUM/HIGH VOLTAGE MULTILAYER CERAMIC CAPACITORS 高压多层陶瓷电容
RECT FAST REC 600V 8A TO-220A 高压多层陶瓷电容
RECTIFIER BRIDGE 10A 100V 170A-ifsm 1.05V-vf 10uA-ir GBJ 15/TUBE 高压多层陶瓷电容
|
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| EMIF09-02726SX EMIF09-02726S6 6312 EMIF09-02726S3 |
0.5MMRASTER, 2ROW, 30 PER ROW EMI滤波器包括静电放电保
0.5MMRASTER 2ROW 10CONTACTS PER ROW EMI滤波器包括静电放电保
HEADER RECT/RECTANG 40 M
From old datasheet system
EMI FILTER INCLUDING ESD PROTECTION
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| 2N2323 JANTX2N2323 JANTX2N2323A JANTX2N2323AS JANT |
SILICON CONTROLLED RECTIFIER
SILICON CONTROLLED RECTIFIER 0.3454 A, 200 V, SCR, TO-5
SILICON CONTROLLED RECTIFIER 1.6 A, 200 V, SCR, TO-205AD
LED RED DIFFUSED 1.8X3.5MM RECT SCR, TO-39
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
