| PART |
Description |
Maker |
| HYS72D64301HBR-5-B HYS72D64301HBR-6-B HYS72D64301G |
184 - Pin Registered Double-Data-Rate SDRAM Module
|
Qimonda AG
|
| HYS72D128300GBR HYS72D128300GBR-5-B HYS72D128300GB |
184-Pin Registered Double Data Rate SDRAM Module
|
INFINEON[Infineon Technologies AG]
|
| HYS72D32300GU-5-C HYS64D16301GU-6-C HYS72D32300HU- |
RES 160 OHM 1/16W 5% 0402 SMD
184-Pin Unbuffered Double Data Rate SDRAM 184引脚缓冲双数据速率SDRAM
|
Infineon Technologies AG
|
| K4D26323AA-GL |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| 3TB41-15 |
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Screw Termination
|
Honeywell
|
| HD68450Y-6 HD68450Y-8 HD68450-10 |
DMA Controller
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Solder Termination DMA控制
|
Omron Electronics, LLC
|
| NT256D64S88B1G NT512D64S8HB0G NT512D64S8HB0G-75B N |
184 pin Unbuffered DDR DIMM
|
ETC[ETC]
|
| M13L2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M13S128324A-2M |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| W9751G6KB-18 W9751G6KB-25 W9751G6KB-3 W9751G6KB25A |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
