PART |
Description |
Maker |
SSM5G06FE |
Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
SSM5H14F |
Silicon N Channel MOS Type (U-MOS?/Silicon Epitaxial Schottky Barrier Diode Silicon N Channel MOS Type (U-MOS楼虏)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
MA721WS |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
1SS367 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
CUS15S30 |
Schottky Barrier Diode Silicon Epitaxial
|
Toshiba Semiconductor
|
1SS321 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
DSR07S30U |
Diode Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
SCS0240DF SCS0240DF-15 |
Silicon Epitaxial Planar Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
|
SSM5H07TU |
Silicon Epitaxial Schottky Barrier Diode DC-DC Converter
|
Toshiba Semiconductor
|
SB160M-40 |
Silicon Epitaxial Planer Schottky Barrier Diode
|
SEMTECH ELECTRONICS LTD.
|