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2SK20907 - Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications

2SK20907_4125738.PDF Datasheet

 
Part No. 2SK20907 2SK209
Description Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications

File Size 548.64K  /  4 Page  

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Toshiba Semiconductor



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Part: 2SK2091
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 Full text search : Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
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2SK2219 1026 2SK2219-21 2SK2219-23 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
N-Channel Junction FET for Capacitor Microphone Applications(应用于电容器话筒的N沟道结型场效应管) N沟道场效应晶体管的结电容麦克风应用(应用于电容器话筒沟道结型场效应管
From old datasheet system
N-Channel Junction Silicon FET
Sanyo Electric Co., Ltd.
2N5754 2N5755 2N5756 2N5757 2.5-A silicon triac. Voltage(typ) 600 V.
2.5-A silicon triac. Voltage(typ) 400 V.
2.5-A silicon triac. Voltage(typ) 200 V.
2.5-A silicon triac. Voltage(typ) 100 V.
2.5-A Silicon Triacs
General Electric Solid State
Solid State Optronic
N.A.
S3902 S3903 S3903-1024Q S3903-512Q MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
Hamamatsu Photonics
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ST Microelectronics
STMicroelectronics
STL40C30H3LL N-channel 30 V, 0.019 Ohm typ., 10 A, P-channel 30 V, 0.024 Ohm typ., 8 A STripFET(TM) V Power MOSFET in a PowerFLAT(TM) 5x6 d. i. package
ST Microelectronics
UPSD3433E-40T6 UPSD3453E-40U6T UPSD3453E-40T6T UPS MOSFET, Switching; VDSS (V): 40; ID (A): 40; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.0038; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2280; toff (µs) typ: 0.041; Package: LFPAK
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0025; RDS (ON) typ. (ohm) @4V[4.5V]: [0.003]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7600; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 20; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0021; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0028]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7750; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 450; ID (A): 0.7; Pch : -; RDS (ON) typ. (ohm) @10V: 5.5; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 140; toff (µs) typ: -; Package: SOP-8
MOSFET, Switching; VDSS (V): 12; ID (A): 3.5; Pch : 0.9; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.026]; RDS (ON) typ. (ohm) @2.5V: 0.034; Ciss (pF) typ: 770; toff (µs) typ: 0.036; Package: CMFPAK-6
MOSFET, Switching; VDSS (V): 80; ID (A): 30; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0115]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3520; toff (µs) typ: -; Package: WPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
Turbo Plus Series Fast Turbo 8032 MCU with USB and Programmable Logic Turbo Plus系列高速涡032 USB和可编程逻辑控制
MOSFET, Switching; VDSS (V): 100; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.012; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4350; toff (µs) typ: 0.037; Package: LFPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
意法半导
STMicroelectronics N.V.
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Hamamatsu Photonics
021-3220 021-4510 021-4520 021-2220 042-3300 021-4 KNOB BLACK
KNOB GREY
ZIFFERNSCHEIBE TYP 3 KNOPFDM 14.5
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PFEILSCHEIBE DM36.0 SCHWARZ
ZIFFERNSCHEIBE TYP 1 KNOPFDM 36.0
ZIFFERNSCHEIBE TYP 2 KNOPFDM 14.5
ZIFFERNSCHEIBE TYP 1 KNOPFDM 14.5
ZIFFERNSCHEIBE TYP 9 KNOPFDM 14.5 ZIFFERNSCHEIBE典型9 KNOPFDM 14.5
ZIFFERNSCHEIBE TYP 8 KNOPFDM 21.0 ZIFFERNSCHEIBE典型8 KNOPFDM 21.0
EPCOS AG
FCH22N60N N-Channel SupreMOSMOSFET 600V, 22A, 165m
Ultra Low Gate Charge (Typ. Qg = 45 nC), Low Effective Output Capacitance (Typ. Coss.eff = 196.4 pF)
Fairchild Semiconductor
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NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
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New Jersey Semi-Conductor Products, Inc.
 
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