| PART |
Description |
Maker |
| BZX79C100 BZX79C3V0 BZX79C2V7 BZX79C24 BZX79C18 BZ |
33V, 0.5W Zener Diode
Zeners 2.4 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
SOTiny Dual SPDT Mux/DeMux Switch
5.1V, 0.5W Zener Diode
7.5V, 0.5W Zener Diode
4.7V, 0.5W Zener Diode
9.1V, 0.5W Zener Diode
3.9V, 0.5W Zener Diode
6.8V, 0.5W Zener Diode
6.2V, 0.5W Zener Diode
5.6V, 0.5W Zener Diode
13V, 0.5W Zener Diode
8.2V, 0.5W Zener Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
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| BZX84C5V1 BZX84C6V2 BZX84C9V1 BZX84C4V7 BZX84C11 B |
8.2V, 0.35W Zener Diode
Zeners
5.1V, 0.35W Zener Diode
10V, 0.35W Zener Diode
11V, 0.35W Zener Diode
12V, 0.35W Zener Diode
13V, 0.35W Zener Diode
15V, 0.35W Zener Diode
16V, 0.35W Zener Diode
18V, 0.35W Zener Diode
20V, 0.35W Zener Diode
22V, 0.35W Zener Diode
4.7V, 0.35W Zener Diode
3.9V, 0.35W Zener Diode
6.2V, 0.35W Zener Diode
5.6V, 0.35W Zener Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| CRS0506 CRS05 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 开关电源的应用
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.36; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD
Switching Mode Power Supply Applications
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| CRS1106 CRS11 |
Switching Mode Power Supply Applications
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.28 to 7.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.52 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 开关电源的应用
|
Toshiba Semiconductor
Toshiba Corporation
Toshiba, Corp.
|
| 1N5361BG 1N5361BRLG 1N5338BG 1N5338BRLG 1N5388BRLG |
5 Watt Silicon Zener Diode(120V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(200V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(150V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(140V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(110V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(100V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(68V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(60V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(62V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(56V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Surmetic TM 40 Zener Voltage Regulators
|
ONSEMI[ON Semiconductor]
|
| 1N4755A-TR 1N4742A-TR 1N4752A-TR 1N4762A-TR VISHAY |
Diode Zener Single 43V 5% 1.3W 2-Pin DO-41 T/R
Diode Zener Single 12V 5% 1.3W 2-Pin DO-41 T/R
Diode Zener Single 33V 5% 1.3W 2-Pin DO-41 T/R
Diode Zener Single 82V 5% 1.3W 2-Pin DO-41
Diode Zener Single 39V 5% 1.3W 2-Pin DO-41 Ammo
ZENER DIODE DO41 GLASS-E2 - Ammo Pack
Zener Diodes
|
Vishay Semiconductors
Vishay Siliconix
|
| UT2316L-AE3-R UT2316-AE3-R |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK N沟道增强模式
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.12; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
N-CHANNEL ENHANCEMENT MODE
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
|
| STR751FR2T6 STR751FR2H6 STR755FR1H6 STR755FXX STR7 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 34.01 to 35.77; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 33.40 to 35.13; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.70 to 6.97; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 12.4 to 13.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.47 to 3.68; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.68 to 31.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 31.49 to 33.11; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 32.79 to 34.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 36.00 to 37.85; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 30.32 to 31.88; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.02 to 30.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.07 to 8.41; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
意法半导
|
| PSP-1G020-13TI PSP-1G010-13TI PSP-1G020 PSP-1G010 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.1 to 8.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 7.7 to 8.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 7.9 to 8.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.3 to 8.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
SFP Optical Transceivers
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| DF3A8.2FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
