PART |
Description |
Maker |
NV23K07 NV23KQASDC10V NV23KASDC10V NV23KASDC12V NV |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc
|
NV2RZDC12V0.64 NV2RZDC12V0.93 NV2R NV2RSDC12V0.93 |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc.
|
BZG05C BZG05C10 BZG05C100 BZG05C11 BZG05C12 BZG05C |
High Precision 10 V Reference; Package: CHIPS OR DIE; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极 High Precision 10 V Reference; Package: PDIP; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极 2.5 V/3.0 V Ultrahigh Precision Bandgap Voltage Reference; Package: PDIP; No of Pins: 8; Temperature Range: Industrial 硅的Z -二极 High Precision 10 V Reference; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极 Silicon Z-Diodes 硅的Z -二极 High Precision 10 V Reference; Package: CerDIP; No of Pins: 8; Temperature Range: Military Silicon Z-Diode(稳压应用电压范围3.3-100V的齐纳二极管) From old datasheet system
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. VISAY[Vishay Siliconix] Vishay Telefunken
|
TC1046VNB TC1046 TC1046VNBTR |
High Precision Temperature-to-Voltage Converter The TC1046 is a linear output temperature sensor whose output voltage is directly proportional to measured temperature. The TC1046 ... The TC1046 is a linear output temperature sensor whose output voltage is directly proportional to measured temperature. The TC1046 can accurately measure temperature from -40C to 125C. The output voltage range for this device is typically
|
Microchip Technology Inc. MICROCHIP[Microchip Technology]
|
T502B106K016AG6110 |
Tantalum, MnO2 Tantalum, High Temperature, T502, 10 uF, 10%, 16 V, 3528, SMD, MnO2, Molded, High Temperature, 230C, N/A, 2.8 Ohms, Height Max = 2.1mm
|
Kemet Corporation
|
SIP-1987HT-01-1001FC SIP-1987HT-01-1001FD SIP-1987 |
TaNFilm垄莽 High Temperature DIP and SIP Networks TaNFilm庐 High Temperature DIP and SIP Networks TaNFilm? High Temperature DIP and SIP Networks
|
IRC - a TT electronics Company.
|
MIC502105 MIC5021YM MIC5021YN |
Temperature Sensor IC; IC Function:Temperature Sensor IC; Package/Case:8-DIP; Mounting Type:Through Hole BUF OR INV BASED MOSFET DRIVER, PDIP8 Temperature Sensor IC; IC Function:Temperature Sensor IC; Package/Case:8-SOIC; Mounting Type:Surface Mount RoHS Compliant: Yes BUF OR INV BASED MOSFET DRIVER, PDSO8 High-Speed High-Side MOSFET Driver
|
Micrel Semiconductor, Inc.
|
AH175-WL-B-A AH175-WL-B-B AH175-PL-B-A AH175-PL-B- |
HALL EFFECT LATCH FOR HIGH TEMPERATURE MAGNETIC FIELD SENSOR-HALL EFFECT, -6-6mT, 400mV, RECTANGULAR, THROUGH HOLE MOUNT HALL EFFECT LATCH FOR HIGH TEMPERATURE 霍尔效应锁存高温
|
Diodes, Inc. 磁阻传感 DIODES[Diodes Incorporated] Diodes Inc.
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
T2035H-600TRG T2035H-600G-TR T2035H T2035H-600G T2 |
Snubberless?/a> high temperature 20 A Triacs Snubberless high temperature 20 A Triacs Snubberless⑩ high temperature 20 A Triacs
|
STMicroelectronics
|
NRT335M06 NRA155M25 NRB474K25 NRC473K16 NRC473K20 |
High-Temperature Durability 高温耐久 R Series Chip High-Temperature Durability
|
Electronic Theatre Controls, Inc. ETC List of Unclassifed Manufacturers http:// NEC List of Unclassifed Man...
|