| PART |
Description |
Maker |
| S4111-35Q S4111-16Q S4111-16R S4111-46Q S4114-35Q |
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
|
Hamamatsu Corporation
|
| OPR2101 |
Six Element Photodiode Array in
|
OPTEK[OPTEK Technologies]
|
| C9004 |
Driver circuit for Si photodiode array
|
HAMAMATSU[Hamamatsu Corporation]
|
| RA0128NAF011 |
AREA SELF-SCANNED PHOTODIODE ARRAY 区自扫描光电二极管阵
|
Air Cost Control
|
| S8866-6411 |
Photodiode array combined with signal processing IC
|
Hamamatsu Corporation
|
| RA0256BAQ011 |
AREA SELF-SCANNED PHOTODIODE ARRAY 区自扫描光电二极管阵
|
Panasonic, Corp.
|
| RL1024PAQ-712 RL1024PAG-712 RL0512PAQ-712 RL0512PA |
P-SERIES LINEAR PHOTODIODE ARRAY IMAGERS P系列线性二极管阵列探测
|
PerkinElmer Optoelectro...
PERKINELMER[PerkinElmer Optoelectronics]
PerkinElmer Inc.
PerkinElmer, Inc.
|
| KOM0622033A |
6-CHIP SILICON PHOTODIODE ARRAY LOW DARK CURRENT
|
SIEMENS AG
Siemens Semiconductor Group
|
| S8865-128G S8865-64G S8866-128G-02 S8865-256G S886 |
Photodiode array combined with signal processing IC for X-ray detection
|
Hamamatsu Corporation
|
| RL1282D |
(RL1282D - RL1288D) High Speed Charge Coupled Photodiode Array
|
EG&G Reticon
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
