| PART |
Description |
Maker |
| TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC55V16100FT-10 TC55V16100FT-12 TC55V16100FT-15 |
1,048,576-WORD BY 16-BIT CMOS STATIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| KS0066F00 |
CMOS Digital Integrated Circuit
|
Samsung Electronics
|
| TC7LX1102FK |
CMOS Digital Integrated Circuits Silicon Monolithic
|
Toshiba Semiconductor
|
| KIC7S32FU-15 |
SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT
|
KEC(Korea Electronics)
|
| TC7LX1101WBG |
CMOS Digital Integrated Circuits Silicon Monolithic
|
Toshiba Semiconductor
|
| TC5090 TC5090AP |
CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
ETC
|
| TC9482N TC9482F |
CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
Toshiba Semiconductor
|
| TC74HC280AP TC74HC280AF |
CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
Toshiba Semiconductor
|
