PART |
Description |
Maker |
SPLMY81X2 |
Passively Cooled Diode Laser Bar, 35 W cw at 808 nm
|
OSRAM GmbH
|
SPLMN81G2 |
Passively Cooled Diode Laser Bar, 50 W cw at 808 nm
|
OSRAM GmbH
|
SPLMN81S9 |
Passively Cooled Diode Laser Bar, 150 W qcw at 808 nm
|
OSRAM GmbH
|
SPLE20N81G2 |
Actively Cooled Diode Laser Bar, 1200 W cw at 808 nm
|
OSRAM GmbH
|
Q62702-P358 Q62702-P1617 SPL_CG SPLCG85 SPLCG98 SP |
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 850 nm, LASER DIODE Laser Diode on Submount 1.0 W cw Class 4 Laser Product 激光二极管W连续类激光产品的Submount 1.0 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
NX7337BF-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
NX7437 |
LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
NX6511GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
NX8349TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|