| PART |
Description |
Maker |
| ADG708 ADG708BRU ADG708CRU ADG709BRU ADG709CRU ADG |
CMOS/ 3 ohm Low Voltage 4-/8-Channel Multiplexers
CMOS, 3 ohm Low Voltage 4-/8-Channel Multiplexers 8-CHANNEL, SGL ENDED MULTIPLEXER, PDSO16
CMOS 3 ohm Low Voltage 4-/8-Channel Multiplexers
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Analog Devices, Inc.
AD[Analog Devices]
|
| ADG758 ADG759 ADG758BCPZ |
CMOS Low Voltage, 3 ohms 4-Channel Multiplexer
CMOS Low Voltage, 3 ohms 8-Channel Multiplexer
3 ohm, 4-/8-Channel Multiplexers in Chip Scale Package
CMOS Low Voltage, 3 O 8-Channel Multiplexer 8-CHANNEL, SGL ENDED MULTIPLEXER, QCC20
|
Analog Devices, Inc.
|
| 5962-9673501HYC 5962-9673501HYA 5962-9673510HYA 59 |
4.5O/20O, 300MHz Bandwidth, Dual SPDT Analog Switches in UCSP
0.6 Ohm, Low-Voltage, Single-Supply, Dual SPDT Analog Switch
Converter 转换
Low-Voltage 3.5 Ohm, SPDT, CMOS Analog Switches 转换
0.8O, Low-Voltage, 4-Channel Analog Multiplexer 转换
|
Harwin PLC
Advanced Interconnections, Corp.
|
| APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| APT10035LFLLG APT10035B2FLL |
Power MOS 7is a new generation of low loss, high voltage, N-Channel
28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi Corporation
MICROSEMI POWER PRODUCTS GROUP
|
| OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6D package
400V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6E package
1000V Dual N-Channel MOSFET in a S-6E package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6
400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier
Electronic Theatre Controls, Inc.
Atmel, Corp.
|
| APT10026L2FLL_03 APT10026L2FLL APT10026L2FLL03 |
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 60 V, 0.023 ohm, N-CHANNE
81 A, 60 V, 0.012 ohm, N-CHANNE
27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
VISHAY INTERTECHNOLOGY INC
|
| 74ALVCH162373T 74ALVCH162373 74ALVCH162373TX |
Low Voltage 16-Bit Transparent Latch with Bushold and 26?Series Resistors in Outputs
Quadruple Bus Buffer Gates With 3-State Outputs 14-SO -40 to 85 ALVC/VCX/A SERIES, DUAL 8-BIT DRIVER, TRUE OUTPUT, PDSO48
Low Voltage 16-Bit Transparent Latch with Bushold and 26 Series Resistors in Outputs
Low Voltage 16-Bit Transparent Latch with Bushold and 26з Series Resistors in Outputs
From old datasheet system
Low Voltage 16-Bit Transparent Latch with Bushold and 26-Ohm Series Resistors in Outputs
Low Voltage 16-Bit Transparent Latch with Bushold and 26 Ohm Series Resistors in Outputs
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
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