| PART |
Description |
Maker |
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| SKHI1005 SKHI10 SKHI10_12 SKHI10/12 |
High Power IGBT Driver
|
Semikron International
|
| MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| 2ED020I12-F |
Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules 2 A 2 CHANNEL, HALF BRIDGE BASED PRPHL DRVR, PDSO18
|
Infineon Technologies AG
|
| MP441207 MP4412 |
High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
Toshiba Semiconductor
|
| MP421107 |
High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
Toshiba Semiconductor
|
| CM100DU-34KA09 |
IGBT MODULES HIGH POWER SWITCHING USE
100 A, 1700 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| CM150DU-12F |
IGBT MODULES HIGH POWER SWITCHING USE
150 A, 600 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| 1SD210FI-FZ600R65KF1 |
SCALE High Voltage IGBT Driver
|
Concept
|
| 1SD210FI-FX200R65KF1 FZ200R65KF1 FD200R65KF1-K |
SCALE High Voltage IGBT Driver
|
List of Unclassifed Manufacturers
ETC
|
| RIC7113A4 |
RadHard High and Low Side 400V MOSFET and IGBT Gate Driver
RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
|
IRF[International Rectifier]
|
