| PART |
Description |
Maker |
| SC16C2550BIBS SC16C2550BIN40112 |
5 V, 3.3 V and 2.5 V dual UART, 5 Mbit/s (max.), with 16-byte FIFOs
|
NXP Semiconductors N.V.
|
| SC16C752BIB48 SC16C752BIBS SC16C752B10 |
5 V, 2.2 V and 2.5 V dual UART, 5 Mbit/s (max.), with 64-byte FIFOs
|
NXP Semiconductors
|
| SC68C2550B |
5 V, 3.3 V and 2.5 V dual UART, 5 Mbit/s (max.), with 16-byte FIFOs and Motorola uP interface
|
Philips
|
| SC16C752BIBS128 SC16C752BIBS151 SC16C752BIBS157 |
5 V, 3.3 V and 2.5 V dual UART, 5 Mbit/s (max.), with 64-byte FIFOs; Package: SOT617-1 (HVQFN32); Container: Reel Pack, SMD, 13", Turned 2 CHANNEL(S), 5M bps, SERIAL COMM CONTROLLER, PQCC32
5 V, 3.3 V and 2.5 V dual UART, 5 Mbit/s (max.), with 64-byte FIFOs; Package: SOT617-1 (HVQFN32); Container: Tray Pack, Bakeable, Single 2 CHANNEL(S), 5M bps, SERIAL COMM CONTROLLER, PQCC32
5 V, 3.3 V and 2.5 V dual UART, 5 Mbit/s (max.), with 64-byte FIFOs; Package: SOT617-1 (HVQFN32); Container: Tray Pack, Bakeable, Multiple 2 CHANNEL(S), 5M bps, SERIAL COMM CONTROLLER, PQCC32
|
NXP Semiconductors N.V.
|
| SC16C652BIB48 SC16C652BIBS |
5V, 3.3 V and 2.5V dual UART, 5 Mbit/s (max.),with 32-byte FIFOs and infrared(IrDA) encoder/decoder
|
NXP Semiconductors
|
| SC16C554B |
5 V 3.3 V and 2.5 V quad UART - 5 Mbit/s (max.) with 16-byte FIFOs
|
NXP Semiconductors
|
| SC16C754BIB80 SC16C754BIA68 |
5 V, 3.3 V and 2.5 V quad UART, 5 Mbit/s (max.) with 64-byte FIFOs
|
NXP Semiconductors
|
| M28W320C-GBT M28W320CB100GB1T M28W320CB100GB6T M28 |
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory
32 Mbit 2Mb x16/ Boot Block Low Voltage Flash Memory
Quadruple ESD transient voltage suppressor - Cd max.: 50 pF; IRM max: 0.1A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 20 V; VRWM: 15 V
Quadruple ESD transient voltage suppressor - Cd max.: 200 pF; IRM max: 0.7A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 6.2 V; VRWM: 4 V
|
意法半导
STMicroelectronics
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| SST34HF164G |
(SST34HF162G / SST34HF164G) 16 Mbit Dual-Bank Flash 2/4 Mbit SRAM ComboMemory
|
SST
|
