PART |
Description |
Maker |
GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 |
E2PROM CMOS PROGRAMMABLE LOGIC DEVICE E2PROM的可编程逻辑器件的CMOS EMI/RFI FILTER IGBT MODULE, TRENCH, 600V, 6 PACK; Transistor type:3-Phase Bridge Inverter; Voltage, Vces:600V; Current, Ic continuous a max:174A; Voltage, Vce sat max:1.9V; Case style:SEMITOP 4; Current, Icm pulsed:400A; Temperature, Tj RoHS Compliant: Yes IGBT MODULE, 6 PACK 600VIGBT MODULE, 6 PACK 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2.2V; Current, Ic continuous a max:24A; Current, Icm pulsed:22A; Power, Pd:1700W; Time, rise:30ns; EPROM CMOS Programmable Logic Device
|
STMicroelectronics N.V. 意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
SMPS7-25-12 |
6-pack IGBT Module
|
SEMPO ELECTRONIC
|
PTMB100B12 |
IGBT MODULE Six-Pack 100A 1200V
|
http:// NIEC[Nihon Inter Electronics Corporation]
|
PTMB50B12 |
IGBT MODULE Six-Pack 50A 1200V
|
Nihon Inter Electronics Corporation
|
IRG7T15FF12Z |
1200V 15A Fast IGBT 6-Pack module packaged in EZIRPACK 1 package
|
International Rectifier
|
MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT From old datasheet system
|
Toshiba Semiconductor
|
MG600Q1US61 |
TOSHIBA IGBT Module Silicon N Channel IGBT GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor
|
C67076-A2510-A67 BSM15GD60DN2 SIEMENSAG-BSM15GD60D |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL IGBT
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
2MBI300NB-060 |
600V/300A 2-Pack IGBT
|
http:// FUJI ELECTRIC HOLDINGS CO., LTD.
|
GB100XCP12-227 |
IGBT/SiC Diode Co-pack
|
GeneSiC Semiconductor, ...
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