PART |
Description |
Maker |
MT16HTF25664AY-667E1 |
512MB, 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 UDIMM
|
Micron Technology
|
NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb(x8/x16.8/3V28字节页)NAND闪存以及256/512Mb(x16/x32.8V的)LPSDRAM的MCP
|
意法半导 STMicroelectronics N.V.
|
K521F12ACD-B060 |
1Gb (128M x8) NAND Flash 512Mb (32M x16) Mobile DDR SDRAM
|
Samsung
|
HYB25D512800AT-7 HYB25D512800AT-8 HYB25D512160AT-8 |
512Mb (64Mx8) DDR266A (2-3-3) 512Mb (64Mx8) DDR200 (2-2-2) 512Mb (32Mx16) DDR200 (2-2-2) 512Mb (128Mx4) DDR200 (2-2-2) 512Mb (64Mx8) DDR333 (2.5-3-3) ?的512Mb4Mx8DDR333内存.5-3-3)?
|
Electronic Theatre Controls, Inc.
|
HFDOM40MRXXX DOM40MR032 |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB,真正的IDE接口模式3.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd. Hanbit Electronics Co., Ltd.
|
HYMP325S64MP8 HYMP112S648 HYMP112S64P8 |
DDR2 SDRAM - SO DIMM 2GB DDR2 SDRAM - SO DIMM 1GB
|
Hynix Semiconductor
|
TS2GJF220 |
2GB USB2.0 JetFlash垄芒220 2GB USB2.0 JetFlash?20
|
Transcend Information. Inc.
|
KVR266X64SC25 KVR266X64SC25_512 KVR266X64SC25/512 |
512MB 266MHz DDR Non-ECC CL2.5 SODIMM MEMORY MODULE SPECIFICATION 512MB 64M x 64-BIT DDR266 CL2.5 200-PIN SODIMM
|
ETC List of Unclassifed Manufacturers
|
TS1GJF2A |
1GB USB2.0 JetFlash垄莽2A 1GB USB2.0 JetFlash?2A
|
Transcend Information. Inc. Transcend Information. ...
|