| PART |
Description |
Maker |
| SFI2955 SFI2955TU |
60V P-Channel A-FET
P-CHANNEL POWER MOSFET
Advanced Power MOSFET
Advanced Power MOSFET
|
Fairchild Semiconductor
|
| IRL640A |
Power MOSFET - BVdss=200V Rds(on)=0.18 ohn Id = 18A
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP3415PBF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| SFW9530 SFI9530 |
Advanced Power MOSFET 10.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFI1310NPBF IRFI1310NPBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRLM110A IRLM110ATF |
N-CHANNEL MOSFET
HEXFET Power MOSFET
Advanced Power MOSFET
100V N-Channel Logic Level A-FET
|
International Rectifier
FAIRCHILD[Fairchild Semiconductor]
|
| SFS9Z34 |
Advanced Power MOSFET 12 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFS150A |
TRANSISTOR|MOSFET|N-CHANNEL|100VV(BR)DSS|31AI(D)|TO-247VAR
Advanced Power MOSFET
|
Fairchild Semiconductor
|
| IRF610A |
Advanced Power MOSFET
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为200V，导通电阻为1.5Ω，漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRL630A IRL630ANL |
200V N-Channel Logic Level A-FET / Substitute of IRL630 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRFS644A |
Advanced Power MOSFET
|
Fairchild Semiconductor
|
