| PART |
Description |
Maker |
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IRHM93130 IRHM9130 IRHM9130-15 |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
RADIATION HARDENED POWER MOSFET / 100V, P-CHANNEL
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
|
IRF[International Rectifier]
|
| HS-6617RH-T 5962R9570801TXC |
Radiation Hardened 2K x 8 CMOS PROM(???灏?MOS 16K???绋?OM)
Radiation Hardened 2K x 8 CMOS PROM 2K X 8 OTPROM, 100 ns, CDFP24
Radiation Hardened 2K x 8 CMOS PROM(抗辐射CMOS 16K可编程ROM)
|
Intersil, Corp.
Intersil Corporation
|
| FSL214R4 FSL214 FSL214D FSL214D1 FSL214D3 FSL214R |
PATCH PANEL HINGE KIT 4U SCA-H
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 1.5 A, 250 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| JANSR2N7408 FN4637 |
Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant,N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSYA150R4 FSYA150D FSYA150D1 FSYA150D3 FSYA150R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 39 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| 5962F9467602VPA 5962F9467602VPC HS7B-1100RH-Q HS7- |
Radiation Hardened/ Ultra High Speed Current Feedback Amplifier with Offset Adjust
Radiation Hardened, Ultra High Speed
Current Feedback Amplifier(抗辐射超高速电流反馈放大器)
Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Gray; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
Radiation Hardened, Ultra High Speed Current Feedback Amplifier VIDEO AMPLIFIER, CDIP8
Radiation Hardened, Ultra High Speed Current Feedback Amplifier 1 CHANNEL, VIDEO AMPLIFIER, CDIP8
Radiation Hardened, Ultra High Speed Current Feedback Amplifier
|
Intersil Corporation
Intersil, Corp.
|
| IRHY57230CMSE |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET
|
International Rectifier
|
| XQR4000XL XQR4013XL-3CB228M XQR4036XL-3CB228M XQR4 |
QPRO XQR4000XL Radiation Hardened FPGAs
QPRO radiation hardened FPGA.
|
Xilinx
|
