| PART |
Description |
Maker |
| M45PE40 M45PE40-VMP6G M45PE40-VMP6TG M45PE40-VMP6T |
4 Mbit Uniform Sector, Serial Flash Memory
From old datasheet system
4 MBIT, LOW VOLTAGE, PAGE-ERASABLE SERIAL FLASH MEMORY WITH BYTE-ALTERABILITY AND A 33 MHZ SPI BUS INTERFACE
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| M25PE80 M25PE80-VMN6G M25PE80-VMN6P M25PE80-VMN6TG |
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout
|
Numonyx B.V
|
| M25PE40 M25PE40-VMN6G M25PE40-VMN6P M25PE40-VMN6TG |
4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout
|
Numonyx B.V
|
| M45PE80 M45PE80-VMN6G M45PE80-VMN6P M45PE80-VMN6TG |
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
http://
|
| M45PE10-VMN6P M45PE10-VMN6TP M45PE10-VMP6TG |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
ST Microelectronics
|
| M25PE16-VMW6TG M25PE16-VMW6TP M25PE16-VMW6G M25PE1 |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout
|
STMicroelectronics
|
| M25PE10-VMN6G M25PE10-VMP6G M25PE10-VMP6P M25PE10- |
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout
|
STMicroelectronics
|
| M25PE40 |
Page-Erasable Serial Flash memory
|
ST Microelectronics
|
| M25PE80 |
Page-Erasable Serial Flash memory
|
ST Microelectronics
|
| M24M01V-LA6T M24M01 M24M01-S M24M01S-LA6T M24M01-V |
5015 RR 26#16 PIN RECP 1兆位串行I?C总线的EEPROM
1 Mbit Serial IC Bus EEPROM 1兆位串行IC总线的EEPROM
1 Mbit Serial I2C Bus EEPROM
1 Mbit Serial I?C Bus EEPROM
1 MBIT SERIAL I²C BUS EEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
