| PART |
Description |
Maker |
| TLN105B |
TOSHIBA INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| Q62703-Q78 LD260 LD262 LD263 LD264 LD265 LD266 LD2 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays 砷化镓红外Lumineszenzdioden - Zeilen砷化镓红外发射器阵列
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| Q68000-A7851 IRL80A IRL80 |
GaAs-Infrarot-Sendediode GaAs Infrared Emitter
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SRD00212Z SRD00212 Q62702-P3010 Q62702-P784 Q62702 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
Ternary PIN Photodiode in TO-Package with Integrated Optics
From old datasheet system
|
SIEMENS A G
Infineon Technologies AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFH405 Q62702-P835 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| SFH405 |
GaAs Infrared Emitter
|
OSRAM GmbH
|
| TLN11707 TLN117F |
INFRARED LED GAAS INFRAED EMITTER 红外发光二极管公认审INFRAED发射
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
