PART |
Description |
Maker |
2SK710 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
|
TOSHIBA
|
MMBR571 MXR571 MPS571 |
NPN silicon high frequency transistor. NPN SILICON HIGH FREQUENCY TRANSISTERS
|
Motorola, Inc
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semiconductor
|
2SC5397 |
For High Frequency Amplify, Middle Frequency Amplify Silicon NPN Epitaxial Type Micro
|
Isahaya Electronics Cor...
|
2SC941 2SC941-O 2SC941-R 2SC941TM 2SC941-Y 2SC942 |
TRANSISTOR SILICON NPN EPIITAXIAL TYPE 晶体管型硅npn型EPIITAXIAL SMA MALE TO TNC MALE; 18GHz PRECISION TEST CABLE ASSEMBLY; WIDEBAND COVERAGE DC - 18 GHZ TEST CABLES. FLEXIBLE FOR EASY CONNECTION AND BEND RADIUS NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) NPN EPITAXIAL TYPE (HIGH, AM, AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) From old datasheet system
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
15GN01MA |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
UPA800T UPA800T-T1-A |
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
California Eastern Labs
|
SD1006 ASISD1006 |
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
ASI[Advanced Semiconductor]
|
MRF4427 |
HIGH-FREQUENCY TRANSISTOR NPN SILICON
|
Motorola, Inc
|
UPA810T-T1-A UPA810T UPA810T-A UPA810T-T1 |
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
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