| PART |
Description |
Maker |
| Q68000-A4444 CGY40 |
From old datasheet system
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Application range: 100 MHz to 3 GHz)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| TG2211FT |
RF SPDT Switch
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| NGA-589 |
MICROWAVE/MILLIMETERWAVEAMPLIFIER|GAAS|TO-243|3PIN|PLASTIC
DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
|
Electronic Theatre Controls, Inc.
Sirenza Microdevices, Inc.
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| TIM7785-6UL |
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
|
| S8836A |
MICROWAVE POWER GaAS FET
|
TOSHIBA[Toshiba Semiconductor]
|
| TIM0910-10 |
MICROWAVE POWER GaAs FET
|
TOSHIBA[Toshiba Semiconductor]
|
| TIM5964-8SL-422 |
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
|
| TIM1414-30L |
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
|
| TIM7785-8UL |
MICROWAVE POWER GaAs FET
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
