| PART |
Description |
Maker |
| RT1A3906-T112 |
FOR LOW FREQUENCY AMPLIFY APPLICATION
|
Isahaya Electronics Cor...
|
| 2SK93010 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNTION TYPE
|
Isahaya Electronics Corporation
|
| INA5002AP1 |
For low frequency power amplify Silicon PNP Epitaxial
|
Isahaya Electronics Corporation
|
| 2SC3355 2SC3355-T |
For amplify low noise and high frequency
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
| 2SC5938 2SC5938B 2SC5938A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC5214 |
For Low Frequency Amplify Application Silicon Npn Epitaxial Type
|
Isahaya Electronics Corporation
|
| INC6007AP1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC3928A-11 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Cor...
|
| 2SC5815 2SC5817 2SC5816 2SC5814 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type
|
Isahaya Electronics Corporation
|
| ISC3244AS1 |
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC5482 2SC548212 |
For Low Frequency Power Amplify Application Silicon NPN Epitaxial Type Micro
|
Isahaya Electronics Corporation
|
