| PART |
Description |
Maker |
| AKD4563A06 |
16bit 4ch A/D and 2ch D/A converter,
|
Asahi Kasei Microsystems
|
| CS5516 CS5520-BP CS5520-BS CS5520-BSZ CS5516-ASZ C |
16BIT/20-BIT BRIDGE TRANSDUCER A/D CONVERTER
|
CIRRUS[Cirrus Logic]
|
| BD7861KN-E2 |
Mixer & Selector IC with PCM CODEC and 16bit D/A Converter
|
Rohm
|
| CS5509-AP CS5509-AS CS5509-ASZ |
SINGLE SUPPLY 16BIT A/D CONVERTER 1-CH 16-BIT DELTA-SIGMA ADC, SERIAL ACCESS, PDSO16
|
Cirrus Logic, Inc.
|
| CS5520 CS5516-AP CS5516-AS 5516 |
16/20-BitBridgeTransducerA/DConverters|DCMeasurement|A/DConverters
16BIT/20-BIT BRIDGE TRANSDUCER A/D CONVERTER
From old datasheet system
|
ETC
|
| A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
| HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 H |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
|
Hynix Semiconductor
|
| AK4564VQ AK4564 AKD4564 |
16bit Mic/Hp/Spk AMP & D-ALC/EQ
16BIT CODEC WITH BUILT-IN ALC AND MIC/HP/SPK-AMP
|
AKM
Asahi Kasei Microsystems
|
| TB62701N E004109 |
16BIT SHIFT REGISTER / LATCH & CONSTANT CURRENT DRIVERS
16BIT SHIFT REGISTER, LATCH & CONSTANT CURRENT DRIVERS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
