| PART |
Description |
Maker |
| 2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications
TRANSISTOR,MOSFET,N-CHANNEL,10V V(BR)DSS,3A I(D),RFMOD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba.
TOSHIBA[Toshiba Semiconductor]
|
| 2SK1522-E 2SK1521 2SK1521-E 2SK1522 |
Silicon N Channel MOS FET
50 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Renesas Electronics Corporation
|
| UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Pch enhancement-type MOS FET
|
NEC[NEC]
|
| RQJ0201UGDQA RQJ0201UGDQATL-E |
3400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET SC-59A, MPAK-3
Silicon P Channel MOS FET Power Switching
|
Vectron International, Inc.
Renesas Electronics Corporation
|
| 2SK2221 |
Silicon N-Channel MOS FET(N娌??MOSFET)
|
Hitachi,Ltd.
|
| 2SJ56709 2SJ567 2SJ5672-7J1B |
2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
|
Toshiba Semiconductor
|
| 2SJ296 2SJ296S 2SJ296L |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB
Silicon P-Channel MOS FET(P沟道MOSFET) 硅P沟道场效应晶体管性（P沟道MOSFET的）
|
Hitachi,Ltd.
|
| RQJ0602EGDQA RQJ0602EGDQATL-E |
1100 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, SC-59A, MPAK-3
Silicon P Channel MOS FET Power Switching
|
Vectron International, Inc.
Renesas Electronics Corporation
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| 2SK1547-01MR |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 4A条（丁）| TO - 220AB现有
N-CHANNEL SILICON POWER MOS-FET
|
Honeywell International, Inc.
FUJI ELECTRIC HOLDINGS CO., LTD.
|
|
