PART |
Description |
Maker |
VIO125-12P1 VID125-12P1 VDI125-12P1 |
IGBT Modules: Boost Configurated IGBT Modules IGBT Modules 138 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation] IXYS, Corp.
|
VID160-12P1 VIO160-12P1 VDI160-12P1 |
IGBT Modules: Boost Configurated IGBT Modules IGBT Modules in ECO-PAC 2
|
IXYS[IXYS Corporation]
|
CM150E3U-24H |
IGBT Modules:1200V IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
VID50-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
MID100-12A3 MII100-12A3 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS Corporation
|
CM20AD05-12H CM20AD00-12H |
CIB Modules: 600V MITSUBISHI IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
2ED020I12-F |
Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules
|
eupec GmbH
|
SKM145GB063DN SKM145GAL063DN |
Superfast NPT-IGBT Modules 200 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
SEMIX653GD176HDC |
Trench IGBT Modules 650 A, 1700 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|