| PART |
Description |
Maker |
| EMC646SP16JS-45L EMC646SP16JS-45LF EMC646SP16JS-45 |
4Mx16 bit CellularRAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| EMC326SP16AKS-45L EMC326SP16AKS-45LF EMC326SP16AKS |
2Mx16 bit CellularRAM AD-MUX
|
Emerging Memory & Logic Solutions Inc
|
| KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
Samsung Electronic
Samsung semiconductor
|
| K3N7VU4000B-DC |
64M-Bit (4Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| K1S64161CCNBSP K1S64161CC |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| S71WS-P S71WS512PC0HF3SR3 S71WS512PC0HF3SR2 S71WS5 |
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM 1.8伏只x16同步写，突发模式CellularRAM的闪存记忆体
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM SPECIALTY MEMORY CIRCUIT, PBGA84
|
Spansion Inc.
Spansion, Inc.
|
| HYE18P32160AC-96 HYE18P32160AC HYE18P32160AC-125 H |
32M Synchronous Burst CellularRAM
|
INFINEON[Infineon Technologies AG]
|
| W986416DH |
SDRAM 4Mx16
|
Winbond Electronics
|
| KMM5324004CSWG KMM5324004CSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5328004BSWG KMM5328004BSW |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5324000BSWG KMM5328000BSW KMM5324000BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
