| PART |
Description |
Maker |
| M58LR128KC765 M58LR128KD |
128 or 256 Mbit (x16, mux I/O, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| IS42LS16800A-10TI IS42S81600A-7T IS42LS81600A-7TI |
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:350VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Capacitance:2400uF RoHS Compliant: Yes
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg × 8Meg x16
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Circuit Solu...
Integrated Silicon Solution, Inc.
Intersil, Corp.
Integrated Circuit Solution...
|
| M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107
64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
| M29W128GH70N3E M29W128GL |
128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory
128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory
|
Numonyx B.V
|
| SST39LF016 SST39LF016-90-4I-EI SST39VF016-90-4I-EI |
(SST39VF080 / SST39VF016 / SST39LF080 / SST39LF016) 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
7.6 mm(0.3 inch) Micro Bright Seven Segment Displays
CONNECTOR ACCESSORY
LED Light Bars
D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL 2M X 8 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PDSO40
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 70 ns, PDSO40
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| M36L0R7050L1ZAMF M36L0R7060U1 M36L0R7060U1ZAME M36 |
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package
|
STMicroelectronics
|
| IS42S16800A1-7TL |
8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc.
|
| M58WR064HL M58WR064HU M58WR064HU70ZB6E M58WR064HU7 |
64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories
|
Numonyx B.V
|
| M58WR064HL70ZB6E M58WR064HL70ZB6U |
64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories
|
Numonyx B.V
|
| M36L0R7050L1ZAMF M36L0R7050L1ZAME M36L0R7060U1ZAMF |
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package 128兆位（复用的I / O，多银行，多层次，多突发）快闪记忆体264兆移动存储芯片，1.8V电源多芯片封
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package 128兆位（复用的I / O，多银行，多层次，多突发）快闪记忆体24兆移动存储芯片，1.8V电源多芯片封
|
意法半导
STMicroelectronics N.V.
|
| M59MR032DZC M59MR032C M59MR032C100GC6T M59MR032C10 |
From old datasheet system
32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位（x16插槽，多银行，多层次，多突发28兆位闪存（突发）移动存储芯片.8V电源，多芯片封装
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
