PART |
Description |
Maker |
GM76C256CLLFW GM76C256CLL GM76C256C GM76C256CE GM7 |
32K x8 bit 5.0V Low Power CMOS slow SRAM 32K x8 bit 5.0V Low Power CMOS slow SRAM 32K的x8.0V低功耗CMOS SRAM的速度 32K X 8 STANDARD SRAM, 55 ns, PDSO28
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
BS62LV256PIP70 BS62LV256PIG55 BS62LV256PIP55 BS62L |
Very Low Power CMOS SRAM 32K X 8 bit 32K X 8 STANDARD SRAM, 70 ns, PDIP28 Very Low Power CMOS SRAM 32K X 8 bit 32K X 8 STANDARD SRAM, 55 ns, PDIP28
|
BRILLIANCE SEMICONDUCTOR, Inc. Brilliance Semiconducto...
|
LY62256SL LY62256SV LY62256RL LY62256 LY62256DL LY |
32K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
UT62256CPC |
32K X 8 BIT LOW POWER CMOS SRAM
|
UTRON
|
AS6C62256 |
32K X 8 BIT LOW POWER CMOS SRAM
|
Alliance Semiconductor Corporation
|
IS61LV3216L-12K IS61LV3216L-12T IS61LV3216L-12KI I |
32K x 17 Low Voltage High-Speed CMOS Static RAM(3.3V,32K x 16 低压高速CMOS静态RAM) 32K x 16 LOW VOLTAGE CMOS STATIC RAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44
|
Integrated Silicon Solution Inc ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution, Inc.
|
HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns 256K (32K x 8-bit) UV EPROM, 250ns 32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM 256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI |
Low Power Slow SRAM - 256Kb SWITCH, REED SPST-NO 10W SMD QSW-REED,10MM,10W,SMD 9 POS FR-4 SIP SOCKET x8|3V|70/85/100|Low Power Slow SRAM - 256K x8|3.3V|70/85/100|Low Power Slow SRAM - 256K 32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM x8 SRAM x8的SRAM x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc. Analog Devices, Inc. Panasonic Industrial Solutions
|
MX66C256 MX66C256TI-70 MX66C256MC-10 MX66C256MI-10 |
Very Low Power 32k x 8 CMOS SRAM
|
Macronix International Co., Ltd.
|
T15M256B03 T15M256B-70DG |
32K X 8 LOW POWER CMOS STATIC RAM
|
Taiwan Memory Technology TM Technology, Inc.
|