| PART |
Description |
Maker |
| IRFIB7N50A IRFIB7N50APBF |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)
HEXFET? Power MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| IRLS3034PBF IRLSL3034PBF IRLS3034TRLPBF IRLS3034PB |
HEXFET Power MOSFET
195 A, 40 V, 0.0017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
HEXFETPower MOSFET
High Efficiency Synchronous Rectification in SMPS
|
International Rectifier
|
| IRL3714L IRL3714S IRL3714 IRL3714STRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 36A条（丁）|63AB
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A)
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
http://
IRF[International Rectifier]
|
| VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR |
Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)
(IRFR120N / IRFU120N) HEXFET Power MOSFET
HEXFET® Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
9.1 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
IRF[International Rectifier]
|
| IRFBA90N20DPBF |
95 A, 200 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-273AA
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
|
International Rectifier
|
| IRFL4105 IRFL4105TR |
3.7 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A)
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
| STP16NE06 STP16NE06FP 5315 P16NE |
11 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel 60V-0.08Ω-16A- TO-220/TO-220FP STripFETTM Power MOSFET(N沟道功率MOSFET) N沟道60V0.08Ω- 16A条，TO-220/TO-220FP STripFETTM功率MOSFET（不适用沟道功率MOSFET的）
N-CHANNEL Power MOSFET
From old datasheet system
N - CHANNEL 60V - 0.08 - 16A - TO-220/TO-220FP STripFET? POWER MOSFET
N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IRFBE30L IRFBE30S |
800V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRFIZ34E IRFIZ34EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
Power MOSFET(Vdss=60V, Rds(on)=0.042ohm, Id=21A)
|
IRF[International Rectifier]
|
| IRFU120 IRFR120TR IRFU120TR |
HEXFET POWER MOSFET HEXFET功率MOSFET
(IRFR120TR / IRFU120TR) HEXFET POWER MOSFET
(IRFR120 / IRFU120) HEXFET POWER MOSFET
HEXFET? Power MOSFET
|
International Rectifier, Corp.
IRF[International Rectifier]
|
