PART |
Description |
Maker |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
2SJ483 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491 |
From old datasheet system P-channel MOS FET (-60V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH 3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH From old datasheet system
|
NEC[NEC]
|
2SK3348 |
Silicon N Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
2SK3378ENTL-E 2SK3378ENTR-E 2SK3378 |
Silicon N Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
2SJ586 |
Silicon P Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
2SK3287 |
Silicon N Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ215 |
Silicon P-Channel MOS FET(P沟道MOSFET) Silicon P-Channel MOS FET(P娌??MOSFET)
|
Hitachi,Ltd.
|
RJL6018DPK-00-T0 RJL6018DPK |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|