| PART |
Description |
Maker |
| MCN51-8S3-PFA MCN51-16P2-DS MCN51-16P2-PFA MCN51-1 |
CAP 0.1UF 50V 20% Z5U RAD.20 .20X.20 BULK 高电流，高密度，电源连接
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 高电流，高密度，电源连接
High Current, High Density, Power Connectors 高电流，高密度，电源连接
High Current / High Density / Power Connectors
|
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| SS10PH10-M3_86A SS10PH10-M3_87A SS10PH10-M3/86A SS |
High Current Density Surface Mount High-Voltage Schottky Rectifier
|
Vishay Siliconix
|
| SS10PH10-E3_86A SS10PH10 SS10PH10-E3_87A SS10PH9 |
High Current Density Surface Mount High-Voltage Schottky Rectifier
|
Vishay Siliconix
|
| AS3PJHM3-86A AS3PJHM3-87A AS3PJ-M3-86A AS3PJ-M3-87 |
High Current Density Standard Avalanche
|
Vishay Siliconix
|
| ISPLSI1024 ISPLSI1024EA-200LT100 1024EA ISPLSI1024 |
200 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyethylene; Number of Pairs:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
In-System Programmable High Density PLD
100 MHz in-system prommable high density PLD
|
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
http://
|
| B340A-M3-61T |
High-Current Density Surface Mount Schottky Rectifier
|
Vishay Siliconix
|
| IPT0408-05B |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| SSA23L-M3-5AT SSA23L-M3-61T |
High-Current Density Surface Mount Schottky Rectifier
|
Vishay Siliconix
|
| B230LA |
High Current Density Surface Mount Schottky Rectifier
|
Vishay Siliconix
|
| IPT0408-05A |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| UH6PD |
High Current Density Surface Mount Ultrafast Rectifier
|
Vishay Siliconix
|
