| PART |
Description |
Maker |
| FDG6320C |
Dual N & P Channel Digital FET
|
Fairchild Semiconductor
|
| FDC6304PQ |
Digital FET, Dual P-Channel
|
Fairchild Semiconductor
|
| FDG6302 FDG6302P |
Dual P-Channel, Digital FET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDG6303 FDG6303N |
Dual N-Channel/ Digital FET
Dual N-Channel, Digital FET
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SK2219 1026 2SK2219-21 2SK2219-23 |
1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
N-Channel Junction FET for Capacitor Microphone Applications(应用于电容器话筒的N沟道结型场效应管) N沟道场效应晶体管的结电容麦克风应用（应用于电容器话筒沟道结型场效应管
From old datasheet system
N-Channel Junction Silicon FET
|
Sanyo Electric Co., Ltd.
|
| PSMN4R4-80PS |
N-channel 80 V, 4.1 m惟 standard level FET
N-channel 80 V, 4.1 m standard level FET 100 A, 80 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 80 V, 4.1 mΩ standard level FET
|
NXP Semiconductors N.V.
|
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| AD5201 AD5207 AD5207BRU100-REEL7 AD5207BRU10-REEL7 |
Dual, 256 Position, Digital Potentiometer
2-Channel/ 256-Position Digital Potentiometer
CONNECTOR ASSEMBLIES RoHS Compliant: Yes
2-Channel, 256-Position Digital Potentiometer DUAL 100K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO14
2-Channel, 256-Position Digital Potentiometer 2通道56位数字电位器
|
AD[Analog Devices]
Analog Devices, Inc.
|
| NID5003NT4 NID5003N |
Self-Protected FET with Temperature and Current Limit 42 V, 20 A, Single N-Channel, DPAK
Self-Protected FET with Temperature and Current Limit(带温度和电流限制的自保护FET)
42 V, 20 A, Single N−Channel, DPAK 20 A, 42 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET
Self-Protected FET with Temperature and Current Limit(甯?俯搴???垫???????淇??FET)
|
ONSEMI[ON Semiconductor]
|
| PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET
From old datasheet system
Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
