| PART |
Description |
Maker |
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
| TM060-180-10-14 |
6 - 18 GHz 14 dBm Gain Module
|
Transcom, Inc.
|
| MGA-81563 |
0.1-6 GHz 3 V, 14 dBm Amplifier(0.1-6 GHz 3 V, 14 dBm 放大
|
Agilent(Hewlett-Packard)
|
| PE71S2017 |
SMA SPDT PIN Diode Switch Operating From 2 GHz to 26.5 GHz Up To 30 dBm
|
Pasternack Enterprises,...
|
| TIM1414-2-252 |
HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| TA005-025-10-24 |
0.5 - 2.5 GHz 24 dBm Amplifier
|
Transcom, Inc.
|
| TM020-060-11-32 |
2 ~ 6 GHz 32 dBm Module
|
Transcom, Inc.
|
| TA005-025-25-20 |
0.5 - 2.5 GHz 20 dBm Amplifier
|
Transcom, Inc.
|
| TM040-060-10-37 |
4 ~ 6 GHz 37 dBm Module
|
Transcom, Inc.
|
| TA020-180-20-10 |
2 - 18 GHz 13 dBm Amplifier
|
Transcom, Inc.
|
