| PART |
Description |
Maker |
| OR2T08A-2BA160 OR2T08A-2BA160I OR2T08A-2BA208 OR2T |
Field-ProgrammableGateArrays
Field-Programmable Gate Arrays
|
AGERE[Agere Systems]
LUCENT
ETC
ETC[ETC]
|
| KM110B KM110B_2 KM110B/2 |
Magnetic field sensor MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, -2.75-2.75mT, RECTANGULAR, THROUGH HOLE MOUNT
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| XC4000XLA-SERIES XC4000XV-SERIES XC40110XV-08HQ240 |
Field Programmable Gate Arrays
Field programmable gate arrays. VCCINT = 2.3V to 2.7V and VCCIO = 3.3 to 3.6V .
Field programmable gate arrays. Vcc = 3.0V to 3.6V.
|
Xilinx
|
| PSD401A1-C-90JI PSD401A1-C-90UI PSD401A2-C-90JI PS |
Low Cost Field Programmable Microcontroller Peripherals
Flash In-System Programmable ISP Peripherals For 8-bit MCUs
PSD4XX/ZPSD4XX FAMILY FIELD-PROGRAMMABLE MICROCONTROLLER PERIPHERALS
|
ST Microelectronics
|
| PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| TMC2000 TMC3000NF |
MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, -.2-0.2mT, 1V, SQUARE, SURFACE MOUNT
MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, -.06-0.06mT, 1V, RECTANGULAR, THROUGH HOLE MOUNT
|
NEC TOKIN CORP
|
| FGH50T65UPD |
650V, 50A, Field Stop Trench IGBT
650 V, 50 A Field Stop Trench IGBT
|
Fairchild Semiconductor
|
| MMBF2202PT1_D ON2097 MMBF2201PT1 MMBF2202PT3 MMBF2 |
Small-signal MOSFET TMOS single P-channel field effect transistor
Motorola Preferred Device
From old datasheet system
LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| STD4525NL STU4525NL |
N-Channel Enhancement Mode Field Effect Transistor
Dual N-Channel E nhancement Mode Field Effect Transistor
|
SamHop Microelectronics
|
| SSM3K01T |
3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Semiconductor
|
