| PART |
Description |
Maker |
| NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，4千兆位，8千兆112 Byte/1056字的页面.8V/3V，NAND闪存
|
STMicroelectronics N.V.
|
| NAND01BG-B NAND01GW3B2AN6 NAND01GR3B2AN6 NAND01GR3 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND01GR3B2BN1E NAND01GW3B2BN6E NAND01GW3B2BZA1E N |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND08GW3C2BZL1E NAND16GW3C2BZL1E NAND08GW3C2BZL1F |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| NAND01G-N NAND01GR3N6 NAND01GR4N5 |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
|
Electronic Theatre Controls, Inc.
|
| NAND04GW3C2AN1E NAND04GA3C2A NAND04GA3C2AN1E NAND0 |
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| AT25F1024A AT25F1024AN-10SU-2.7 AT25F1024AY4-10YU- |
Byte Mode and 256-byte Page Mode for Program Operations
1Mbit High Speed SPI Serial Flash Memory 1M (131,072 x 8)
|
ATMEL Corporation
|
| TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
| AT28C64B |
64K EEPROM with 64-Byte Page & Software Data Protection
|
Atmel
|
| NAND512W3A2CN6F NAND512W3A2CN6E |
512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
Numonyx B.V
|
