| PART |
Description |
Maker |
| DCA01006 DCA010-TB-E |
Very High-Speed Switching Diode
Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode
|
Sanyo Semicon Device
|
| TSPF5400 |
High Speed IR Emitting Diode in 5 mm (T-13/4) Package
High Speed IR Emitting Diode in ?5 mm (T-13/4) Package
From old datasheet system
High Speed IR Emitting Diode in ? 5 mm (T?1 3/4) Package
High Speed IR Emitting Diode in 酶 5 mm (T-13/4) Package
High Speed IR Emitting Diode in ?5 mm (T-13/4) Package
|
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| 1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
Latest Silicon Discretes - Switching Diode for high speed switching
Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| RD0506T-H RD0506T-TL-H RD0506T12 ENA1574B |
Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
|
Sanyo Semicon Device
|
| IKP20N65F5 |
high power thyristor diode
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| BAS678 |
High-speed diode 0.3 A, 100 V, SILICON, SIGNAL DIODE
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BAS40-07W BAS4007W |
Silicon Schottky Diode Preliminary data (General-purpose diode for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CPD63 |
Chip Form: HIGH SPEED SWITCHING DIODE
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor
|
| 1SS399 |
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
