| PART |
Description |
Maker |
| SHXXC1850 |
Capsule Type Rectifier Diode
|
Hind Rectifiers Limited.
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| IR180DR-G06PBF IR150DR-G08PBF IR150DR-G04PBF IR180 |
25 A, 600 V, SILICON, RECTIFIER DIODE
16 A, 800 V, SILICON, RECTIFIER DIODE
16 A, 400 V, SILICON, RECTIFIER DIODE
25 A, 200 V, SILICON, RECTIFIER DIODE
25 A, 1000 V, SILICON, RECTIFIER DIODE
16 A, 1200 V, SILICON, RECTIFIER DIODE
16 A, 100 V, SILICON, RECTIFIER DIODE
|
TT electronics Semelab, Ltd.
|
| IRKC61/20 IRKC61-20 IRKD270-22-NPBF IRKD270-24NPBF |
60 A, 2000 V, SILICON, RECTIFIER DIODE
270 A, 2200 V, SILICON, RECTIFIER DIODE
270 A, 2400 V, SILICON, RECTIFIER DIODE
DIODE 320 A, 600 V, SILICON, RECTIFIER DIODE, POWER, MAGN-A-PAK-3, Rectifier Diode
|
VISHAY SEMICONDUCTORS
|
| 1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns)
(1N2xxx) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
(1N4525 - 1N4529) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| SB120-05H 2513 |
40V, 1.1A Rectifier 40V的，1.1A的整流器
From old datasheet system
40V 1.1A Rectifier
50V, 12A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| BYV118F BYV118F-35 BYV118F-40 BYV118F-45 BYV118X B |
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 10 A, 40 V, SILICON, RECTIFIER DIODE
DB-25 MALE CONN KIT CRIMP 10 A, 40 V, SILICON, RECTIFIER DIODE
CRIMP SHELLS DB25 MALE 10 A, 35 V, SILICON, RECTIFIER DIODE
Rectifier diodes Schottky barrier 10 A, 35 V, SILICON, RECTIFIER DIODE
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| SB50-18 |
180V, 5A Rectifier(高频整流应用的重复反向电80V，平均整流电A 整流
180V/ 5A Rectifier
Schottky Barrier Diode (Twin Type Cathode Common) 180V, 5A Rectifier
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| SB30-09J |
Schottky Barrier Diode (Twin Type Cathode Common) 90V, 3A Rectifier
90V, 3A Rectifier(高频整流应用的重复反向电0V，平均整流电.0A 整流
90V/ 3A Rectifier
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| UFT120 UFT12010 UFT12015 UFT12020 UFT12130 UFT1214 |
60 A, 500 V, SILICON, RECTIFIER DIODE
60 A, 700 V, SILICON, RECTIFIER DIODE
ULTRA FAST RECOVERY MODULES 60 A, 100 V, SILICON, RECTIFIER DIODE
60 A, 800 V, SILICON, RECTIFIER DIODE
|
MICROSEMI CORP-COLORADO
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-SCOTTSDALE
|
| RBU801M RBU801M10 RBU804M RBU805M RBU806M RBU801M- |
8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes
8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
RECTRON LTD
Rectron Semiconductor
|
| DS2101SY14 DS2101SY15 DS2101SY DS2101SY10 DS2101SY |
Rectifier Diode 7810 A, 1300 V, SILICON, RECTIFIER DIODE
Rectifier Diode 整流二极
Rectifier Diode 7810 A, 1400 V, SILICON, RECTIFIER DIODE
Rectifier Diode 7810 A, 1100 V, SILICON, RECTIFIER DIODE
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
|
