| PART |
Description |
Maker |
| MMBZ5235B MMBZ5250B MMBZ5243B MMBZ5252B MMBZ5221B |
Zeners 6.8 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3-32V Dual Operational Amplifier, Ta = 0 to 70°C; Package: Micro8™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 4000
3.9V, 0.35W Zener Diode
27V, 0.35W Zener Diode
6.8V, 0.35W Zener Diode
33V, 0.35W Zener Diode
13V, 0.35W Zener Diode
9.1V, 0.35W Zener Diode
15V, 0.35W Zener Diode
30V, 0.35W Zener Diode
16V, 0.35W Zener Diode
3.3V, 0.35W Zener Diode
20V, 0.35W Zener Diode
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Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| BZX84C5V1 BZX84C6V2 BZX84C9V1 BZX84C4V7 BZX84C11 B |
8.2V, 0.35W Zener Diode
Zeners
5.1V, 0.35W Zener Diode
10V, 0.35W Zener Diode
11V, 0.35W Zener Diode
12V, 0.35W Zener Diode
13V, 0.35W Zener Diode
15V, 0.35W Zener Diode
16V, 0.35W Zener Diode
18V, 0.35W Zener Diode
20V, 0.35W Zener Diode
22V, 0.35W Zener Diode
4.7V, 0.35W Zener Diode
3.9V, 0.35W Zener Diode
6.2V, 0.35W Zener Diode
5.6V, 0.35W Zener Diode
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FAIRCHILD[Fairchild Semiconductor]
|
| TC74AC164P07 TC74AC164F TC74AC164FN TC74AC164FT |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 25.10 to 28.90; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 23.72 to 24.78; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.05; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 24.54 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
CMOS Digital Integrated Circuit Silicon Monolithic 8-Bit Shift Register (S-IN, P-OUT)
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Toshiba Corporation
Toshiba Semiconductor
|
| NTE5061A NTE5062A NTE5063A NTE5064A NTE5065A NTE50 |
Zener diode, 1 watt, -5% tolerance. Nominal zener voltage Vz = 68V. Zener test current Izt = 3.7mA.
Zener Diode, 1 Watt ±5% Tolerance
Zener Diode, 1 Watt 【5% Tolerance
Zener Diode 1 Watt 5% Tolerance
Zener Diode, 1 Watt 5% Tolerance
Zener Diode / 1 Watt 5% Tolerance
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
Zener Diode, 1 Watt % Tolerance
10 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
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NTE[NTE Electronics]
Mitsubishi Electric, Corp.
NTE Electronics, Inc.
|
| CMS1006 CMS10 CMS10-06 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.8 to 14.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
Switching Mode Power Supply Applications
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.5 to 14.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.8 to 14.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
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Toshiba Semiconductor
Toshiba Corporation
|
| 1N974B 1N963B 1N965B 1N962B 1N970B 1N960B 1N968D 1 |
0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 30V. Test current 4.2mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 75V. Test current 1.7mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 39V. Test current 3.2mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. -20% tolerance.
0.5W SILICON ZENER DIODES
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 50μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
PC 4/ 5-ST-7,62 .5W硅稳压二极管
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 51V. Test current 2.5mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 47V. Test current 2.7mA. -10% tolerance.
|
JGD[Jinan Gude Electronic Device]
济南固锝电子器件有限公司
Jinan Gude Electronic Device Co., Ltd.
Semtech, Corp.
娴???洪??靛??ㄤ欢??????
Jinan Gude Electronic D...
|
| UT2316L-AE3-R UT2316-AE3-R |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK N沟道增强模式
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.12; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
N-CHANNEL ENHANCEMENT MODE
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
|
| MZ4624 MZ4619 MZ4626 MZ4620 MZ4623 MZ4616 MZ4622 M |
Zener diode, 500 mW, zener voltage 4.7V
Zener diode, 500 mW, zener voltage 3V
Zener diode, 500 mW, zener voltage 5.6V
Zener diode, 500 mW, zener voltage 3.3V
Zener diode, 500 mW, zener voltage 4.3V
Zener diode, 500 mW, zener voltage 2.2V
Zener diode, 500 mW, zener voltage 3.9V
Zener diode, 500 mW, zener voltage 2.4V
Zener diode, 500 mW, zener voltage 10V
Low voltage avalanche passivated silicon oxide zener regulator diodes, 500 mW, zener voltage 6.8V
500 milliwatts glass silicon zener diode, zener voltage 22V
500 milliwatts glass silicon zener diode, zener voltage 51V
500 mW DO-35 Glass Zener Voltage Regulator Diodes
500 milliwatts glass silicon zener diode, zener voltage 62V
500 milliwatts glass silicon zener diode, zener voltage 33V
Low voltage avalanche passivated silicon oxide zener regulator diodes, 500 mW, zener voltage 8.2V
Zener diode, 500 mW, zener voltage 2V
Zener diode, 500 mW, zener voltage 8.2V
Zener diode, 500 mW, zener voltage 8.7V
Zener diode, 500 mW, zener voltage 9.1V
|
Motorola
|
| E2K-C E2K-C25MY2 |
Long-distance capacitive proximity sensor
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.5 to 2.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.5 to 2.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 长途电容式接近传感
|
Omron Electronics LLC
Omron Electronics, LLC
|
| DF3A8.2FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
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Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
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