| PART |
Description |
Maker |
| 1SV298 |
Type Attenuator Applications
|
SANYO[Sanyo Semicon Device]
|
| JDP4P02U |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5785 |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
TOSHIBA
|
| TPC8206 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| 1SV31207 |
VHF~UHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| 1SV25207 |
VHF~UHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| 1SV17207 |
VHF~UHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| 1SV27107 |
VHF~UHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| 1SV252 |
VHF~UHF Band RF Attenuator Applications
|
Guangdong Kexin Industrial Co.,Ltd
|
| R414720000 |
ATTENUATOR, N 2W 20DB 12.4GHZATTENUATOR, N 2W 20DB 12.4GHZ; Impedance:50R; Attenuation:20dB; Connector type:N; Frequency, operating max:12.4GHz; Power rating:2W 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR
|
Radiall S.A.
|
| RN6003 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications
|
TOSHIBA
|
