PART |
Description |
Maker |
S4060 S4060M S4060D S4060U |
10A sensitive-gate silicon controlled rectifier. Vrrxm, 25V. 10A sensitive-gate silicon controlled rectifier. Vrrxm, 400V. 10A sensitive-gate silicon controlled rectifier. Vrrxm, 600V. 10 AMPERE SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
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General Electric Solid State ETC[ETC]
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IRG4BC30U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
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IRF[International Rectifier]
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BT138-600 BT138 |
600V Vdrm 12A Triac, 1.65V Peak On-State Voltage, 2.0mA Repetitive Peak Off-State Current Bi-Directional Triode Thyristor
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SemiWell Semiconductor
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IRG4BC30UD IRG4BC30UDPBF |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
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IRF[International Rectifier]
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STK10C48-5P35 STK10C48-5P35I STK10C48-5P30 STK10C4 |
NVRAM (EEPROM Based) Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Holding Current:50mA Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Current, It av:10A; Gate Trigger Current Max, Igt:50mA; Holding Current:50mA RoHS Compliant: Yes Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:15A; Holding Current:70mA Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:20mA; Current, It av:16A; Gate Trigger Current Max, Igt:20mA; Holding Current:35mA RoHS Compliant: Yes Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:80mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:80mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Gate Trigger Current Max, Igt:50mA NVRAM中(EEPROM的基础 Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA NVRAM中(EEPROM的基础
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Atmel, Corp.
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BT139 BT139-600E |
Passivated, sensitive gate triacs in a SOT78 (TO-220AB) plastic package. BT139 series E Triacs; sensitive gate
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NXP Semiconductors
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BT138-600 BT138-600F BT138-600G BT138-500/B BT138- |
TRIAC 12A SOT-186A TRIAC 12A/600V TRIAC 12A/500V Triacs
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Philips Semiconductors
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MAC4DLM-D MAC4DLM-1G |
Sensitive Gate Triacs; Package: DPAK-3 (SINGLE GAUGE); No of Pins: 4; Container: Rail; Qty per Container: 75 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC Sensitive Gate Triacs Silicon Bidirectional Thyristors
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ON Semiconductor
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BD825-16 BD827-10 BD827-6 BD829-6 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1.5AI(丙)|02 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一(c)|202
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Analog Devices, Inc. HIROSE ELECTRIC Co., Ltd.
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MCR08BT1 MCR08B MCR08MT1 MCR08BT1-D |
Sensiteve Gate Silicon Controlled Rectifier Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
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ONSEMI[ON Semiconductor]
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TS1220-600B-TR TS1220-600H TS1220-600H-TR TS1220-7 |
SENSITIVE & STANDARD(12A SCRs)
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ST Microelectronics STMicroelectronics
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