| PART |
Description |
Maker |
| PDI-E940SM |
GaAlAs High power IR LED Emitters
|
API Delevan
|
| PDI-E825 |
GaAlAs High Power IR LED Emitters
|
Advanced Photonix, Inc.
|
| PDI-E808-A |
GaAlAs High power IR LED Emitters
|
Advanced Photonix, Inc.
|
| 127141D |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器，红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm
From old datasheet system
|
红外LED
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| OD-880F |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| OD-850-003 |
High-Power GaAlAs IR Emitters
|
OptoDiode Corp
|
| OD-880 |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| OD-850-004 OD-850F-18 |
High-Power GaAlAs IR Emitters
|
OptoDiode Corp
|
| OD-24X24-C |
HIGH-POWER GaAlAs EMITTER CHIPS
|
OptoDiode Corp
|
