| PART |
Description |
Maker |
| 1SS370 E000291 |
From old datasheet system
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
DIODE (HIGH VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| CMHD4150 |
SURFACE MOUNT HIGH SPEED SWITCHING DIODE 0.25 A, 50 V, SILICON, SIGNAL DIODE
SURFACE MOUNT HIGH SPEED SWITCHING DIODE
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| CMOD4448 CENTRALSEMICONDUCTORCORP-CMOD4448 |
ULTRAminiTM HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| 1PS181 |
High-Speed Double Diode 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| DCA010 |
0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Very High-Speed Switching Diode
From old datasheet system
|
SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
|
| PACDN005SR PACDN005S/T PACDN005ST PACDN005QT PACDN |
APPLICATION SPECIFIC DIODE ARRAY|SO
P/ACTIVE SCHOTTKY DIODE HIGH SPEED BUS TERMINATOR
|
California Micro Devices Co...
California Micro Devices Corporation
|
| DCJ010 1185 |
Silicon Epitaxial Planar Type Diode High-Speed Switching Diode
From old datasheet system
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| BAS678 |
High-speed diode 0.3 A, 100 V, SILICON, SIGNAL DIODE
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BAS40-07W BAS4007W |
Silicon Schottky Diode Preliminary data (General-purpose diode for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CMPD415010 |
SURFACE MOUNT HIGH CURRENT, HIGH SPEED SILICON SWITCHING DIODE
|
Central Semiconductor Corp
|
| SLD234VL |
High Power Laser Diode that Achieves High-Speed CD-R Recording
|
List of Unclassifed Manufacturers
|
