| PART |
Description |
Maker |
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| SG2644 SG2644DW SG2644J SG2644M SG2644R SG2644T SG |
Half Bridge Driver, Non-Inverting
DUAL HIGH SPEED DRIVER 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8
DUAL HIGH SPEED DRIVER 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, MBFM9
DUAL HIGH SPEED DRIVER 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDIP14
DUAL HIGH SPEED DRIVER 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDIP8
EXTRACTION TOOL 566 SERIES
From old datasheet system
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| WNM2025 WNM2025-3 WNM2025-3TR |
Single N-Channel, 20V, 3.9 A, Power MOSFET Supper high density cell design
N-Channel MOSFET
|
TY Semiconductor Co., L...
|
| LTC1693-1 LTC1693-3 |
High Speed Dual N-Channel MOSFET Drivers(高速，双路P沟道MOS场效应管驱动器（2个同相驱动器 高速双N沟道MOSFET驱动器（高速，马鞍山双P沟道场效应管驱动器（2个同相驱动器））
High Speed Single N-Channel MOSFET Drivers(高速，单路P沟道MOS场效应管驱动 高速单N沟道MOSFET驱动器（高速，单路马鞍P沟道场效应管驱动器）
|
Linear Technology, Corp.
|
| MIC94030 MIC94030BM4 MIC94031BM4 4030B MIC94031 |
TinyFET P-Channel MOSFET(TinyFET???P娌??澧?己??OS?烘?搴??)
TinyFETP-Channel MOSFET Preliminary Information TinyFETP沟道MOSFET的初步信
10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
TinyFET P-Channel MOSFET(TinyFET技P沟道增强型MOS场效应管)
TinyFET P-Channel MOSFET Preliminary Information
TinyFET⑩ P-Channel MOSFET Preliminary Information
TinyFET?/a> P-Channel MOSFET Preliminary Information
|
Micrel Semiconductor, Inc.
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
| Q62702-F1772 BF2000W |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| RJK1021DPE-00-J3 RJK1021DPE |
70 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET SC-83, LDPAK-3
N-Channel Power MOSFET High-Speed Switching Use
|
Renesas Electronics Corporation
|
| APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| ZXMN6A25DN8 ZXMN6A25DN8TA ZXMN6A25DN8TC |
N Channel MOSFET
DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET
Line Filter; Current Rating:30A; Voltage Rating:250V; Features:High Attenuation; Peak Reflow Compatible (260 C):No; Terminal Type:Screw; Series:MXB
|
ZETEX[Zetex Semiconductors]
|
| IXTP15N30MB IXTP15N30MA IXTH12N45MA IXTH15N35MB IX |
TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 15A I(D) | TO-220(5)
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 12A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 15A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 20A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 23A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 35A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 27A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 31A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 42A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 15A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 42A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 35A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 12A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 11A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 17A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 21A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 21A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 15A I(D) | TO-220(5)
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-220(5)
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-220(5)
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 67A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 67A条（丁）|的Z -委员
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 24A条（丁）|的Z -委员
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 20A条（丁）|的Z -委员
|
Ricoh Co., Ltd.
|
