| PART |
Description |
Maker |
| NE71083-07 NE710 NE71000 NE71083-06 NE71083-08 NE7 |
90 GHz, low noise Ku-K band GaAs MESFET
LOW NOISE Ku-K BAND GaAs MESFET 低噪声谷K波段GaAs MESFET器件
|
NEC Corp.
NEC, Corp.
|
| NEZ1011-4E NEZ1414-4E |
4W X, Ku-BAND POWER GaAs MESFET
|
NEC
|
| NE9000 NE900000 NE900000G NE900075 NE900089A NE900 |
Ku-BAND MEDIUM POWER GaAs MESFET
|
NEC
|
| AFM04P2-000 |
Ka Band Power GaAs MESFET Chip
|
Alpha Industries Inc
ALPHA[Alpha Industries]
|
| NEZ1414-3E |
KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
| NEZ7785-15DD |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
| NEZ1011-8E |
X BAND, GaAs, N-CHANNEL, RF POWER, MESFET T-61, 2 PIN
|
NEC, Corp.
|
| NEZ6472-15D |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET HERMETIC SEALED, T-65, 2 PIN
|
Electronics Industry Public Company Limited
|
| NEZ7785-15DL |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET HERMETIC SEALED, T-65, 2 PIN
|
NEC, Corp.
Electronics Industry Public Company Limited
|
| NE72218 NE72218-T1 |
C TO X BAND N-CHANNEL GaAs MESFET
|
California Eastern Labs
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
|
