| PART |
Description |
Maker |
| MACH111SP MACH231-14JI/1 MACH131-14JI/1 MACH131-5J |
EMITTER IR 880NM 5MM SMD RADIAL
SUR ABSORBER 7MM 430V 1250A ZNR
High-Performance EE CMOS Programmable Logic EE PLD, 14 ns, PQCC44
High-Performance EE CMOS Programmable Logic EE PLD, 7.5 ns, PQFP100
High-Performance EE CMOS Programmable Logic EE PLD, 14 ns, PQCC84
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQCC84
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQFP100
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQCC68
High-Performance EE CMOS Programmable Logic EE PLD, 10 ns, PQFP100
High-Performance EE CMOS Programmable Logic EE PLD, 7.5 ns, PQCC68
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQFP44
High-Performance EE CMOS Programmable Logic EE PLD, 10 ns, PQFP44
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQCC44
INDUSTRIAL TO RJ45 CAT5E PATCH CORD 15FT EE PLD, 18 ns, PQCC44
INDUSTRIAL TO INDUSTRIAL CAT6 PATCH CORD 5FT EE PLD, 18 ns, PQCC44
INDUSTRIAL TO RJ45 CAT6 PATCH CORD 20FT EE PLD, 15 ns, PQCC84
High-Performance EE CMOS Programmable Logic EE PLD, 15 ns, PQCC44
High-Performance EE CMOS Programmable Logic EE PLD, 15 ns, PQFP44
INDUSTRIAL TO RJ45 CAT5E PATCH CORD 20FT EE PLD, 18 ns, PQCC44
RES 3.32K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
RJ45-DB9M (DTE)
Silver Mica Capacitor; Capacitance:62pF; Capacitance Tolerance: /- 5%; Series:CD15; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:No RoHS Compliant: No
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| QVS212CG010BDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| KSC2751 |
NPN (HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE)
|
Samsung semiconductor
|
| CM421690 CM421290 |
SCR/Diode POW-R-BLOK⑩ Modules 90 Amperes/1200-1600 Volts
SCR/Diode POW-R-BLOK Modules 90 Amperes/1200-1600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CT230802 |
Split Dual SCR POW-R-BLOK Modules 20 Amperes/800 Volts
Split Dual SCR POW-R-BLOK⑩ Modules 20 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM4316A2 CM4312A2 |
Dual SCR POW-R-BLOK Modules 25 Amperes/1200-1600 Volts
Dual SCR POW-R-BLOK⑩ Modules 25 Amperes/1200-1600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CD510825 |
Dual Diode POW-R-BLOK⑩ Modules 250 Amperes/800 Volts
Dual Diode POW-R-BLOK Modules 250 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CDD10810 |
Dual Diode POW-R-BLOK⑩ Modules 100 Amperes/800 Volts
Dual Diode POW-R-BLOK Modules 100 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| K6R1016C1D-JECII10/12 K6R1016V1D-JTICI08/10 K6R101 |
64K*16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 在商业和工业温度范围运作64Kx16位高速CMOS静态RAM3.3V的）
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的）在商业和工业温度范围操作
|
Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
