PART |
Description |
Maker |
KM68FS1000 KM68FR1000 |
128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低电压CMOS 静RAM) 128K的x8位超低功耗和低电压的CMOS全静态RAM28K的8位超低功耗和低电压的CMOS静态RAM)的
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
KM68FS1000Z |
128Kx8 Bit Super Low Power and Low Voltage Full CMOS SRAM(128K x 8位超低功耗和低电压CMOS 静RAM) 128Kx8位超级低功耗和低电压的CMOS SRAM的全部(128K的8位超低功耗和低电压的CMOS静态RAM)的
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MX27C1000A MX27C1000AMC-10 MX27C1000AMC-12 MX27C10 |
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32 Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 125
|
Macronix International Co., Ltd. MCNIX[Macronix International]
|
IDT71T024L200PZI IDT71T024 IDT71T024L150PZ IDT71T0 |
LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT) 128K X 8 STANDARD SRAM, 150 ns, PDSO32
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
LY62L12916 LY62L12916E LY62L12916GL LY62L12916GV L |
128K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
BS616LV2019AI55 BS616LV2019TI70 BS616LV2019DIP55 B |
Very Low Power CMOS SRAM 128K X 16 bit
|
Brilliance Semiconducto... Brilliance Semiconductor
|
LY621024SL LY621024SLE LY621024SLI LY621024SV LY62 |
128K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
K6F2016U4G K6F2016U4G-F K6F2016U4G-FF55 K6F2016U4G |
2Mb(128K x 16 bit) Low Power SRAM
|
http:// SAMSUNG[Samsung semiconductor]
|
LY621024 |
128K X 8-Bit Low Power CMOS SRAM
|
Lyontek
|
BS616LV2011 BS616LV2011AC BS616LV2011AI BS616LV201 |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
|
BSI[Brilliance Semiconductor] Brilliance Semiconducto...
|